SUP80090E-GE3
MOSFET N-CH 150V 128A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SUP80090E-GE3 is an N-Channel Power MOSFET designed for high-current applications. This component features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 128A at 25°C (Tc). The device exhibits a maximum Rds(on) of 9.4mOhm at 30A and 10V, with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 5V at 250µA. Input capacitance (Ciss) is specified at a maximum of 3425pF at 75V, and gate charge (Qg) is 95nC at 10V. With a power dissipation of 375W (Tc), this MOSFET is suitable for through-hole mounting in a TO-220AB package. The operating temperature range is -55°C to 175°C (TJ). This component finds application in power supplies, motor control, and industrial power systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3425 pF @ 75 V |
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