SUP75P05-08-E3
MOSFET P-CH 55V 75A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP75P05-08-E3 is a P-channel TrenchFET® power MOSFET designed for high-efficiency power switching applications. This device features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance of 8mOhm is achieved at 30A and 10V Vgs, ensuring minimal conduction losses. With a gate charge (Qg) of 225 nC at 10V and input capacitance (Ciss) of 8500 pF at 25V, it offers excellent switching performance. The MOSFET supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 3.7W (Ta) and 250W (Tc). The TO-220AB through-hole package facilitates ease of mounting in power distribution, industrial motor control, and automotive systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
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