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SUP75P05-08-E3

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SUP75P05-08-E3

MOSFET P-CH 55V 75A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUP75P05-08-E3 is a P-channel TrenchFET® power MOSFET designed for high-efficiency power switching applications. This device features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance of 8mOhm is achieved at 30A and 10V Vgs, ensuring minimal conduction losses. With a gate charge (Qg) of 225 nC at 10V and input capacitance (Ciss) of 8500 pF at 25V, it offers excellent switching performance. The MOSFET supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 3.7W (Ta) and 250W (Tc). The TO-220AB through-hole package facilitates ease of mounting in power distribution, industrial motor control, and automotive systems. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8500 pF @ 25 V

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