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SUP75N03-04-E3

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SUP75N03-04-E3

MOSFET N-CH 30V 75A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUP75N03-04-E3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). The device exhibits a low on-resistance of 4mOhm maximum at 75A and 10V Vgs. With a gate charge (Qg) of 250 nC maximum at 10V Vgs and input capacitance (Ciss) of 10742 pF maximum at 25V Vds, it offers efficient switching characteristics. The power dissipation is rated at 3.7W (Ta) and 187W (Tc). Packaged in a TO-220AB through-hole configuration, this component is suitable for power management, automotive, and industrial applications. It operates across a temperature range of -55°C to 175°C (TJ) with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10742 pF @ 25 V

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