SUP70N03-09BP-E3
MOSFET N-CH 30V 70A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP70N03-09BP-E3 TrenchFET® series N-Channel Power MOSFET. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C (Tc). With a low on-resistance (Rds On) of 9mOhm at 30A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 93W (Tc). The device is packaged in a TO-220AB through-hole package, suitable for demanding applications across industrial, automotive, and power supply sectors. Key parameters include a gate charge (Qg) of 19 nC at 5V Vgs and input capacitance (Ciss) of 1500 pF at 25V Vds. It operates within a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |