SUP70101EL-GE3
MOSFET P-CH 100V 120A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SUP70101EL-GE3 is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 100V. This device offers a continuous drain current (Id) of 120A at 25°C and a maximum power dissipation of 375W, both specified at the case temperature (Tc). It features a low on-resistance optimized for high-efficiency power switching applications. The gate charge (Qg) is 190 nC maximum at 10V, and the input capacitance (Ciss) is 7000 pF maximum at 50V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 2.5V maximum at 250µA. This through-hole component is supplied in a TO-220AB package, commonly utilized in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 50 V |
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