SUP70090E-GE3
MOSFET N-CH 100V 50A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SUP70090E-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current rating of 50A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance specified is 8.9mOhm maximum at 20A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 50 nC maximum at 10V and input capacitance (Ciss) of 1950 pF maximum at 50V. Operating over a temperature range of -55°C to 175°C (TJ), this device is housed in a standard TO-220AB through-hole package. Applications frequently include power supplies, motor control, and automotive systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 50 V |
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