SUP70060E-GE3
MOSFET N-CH 100V 131A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SUP70060E-GE3 is an N-Channel MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 131A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The low on-resistance of 5.8mOhm at 30A and 10V (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 81 nC (max) at 10V and input capacitance (Ciss) of 3330 pF (max) at 50V. The device is housed in a TO-220AB through-hole package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply circuits, motor control, and automotive applications.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 131A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3330 pF @ 50 V |
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