SUP70040E-GE3
MOSFET N-CH 100V 120A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP70040E-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 120A at 25°C, with a maximum power dissipation of 375W (Tc). The device offers a low on-resistance (Rds On) of 4mOhm at 20A and 10V, facilitated by its advanced trench technology. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 5100 pF at 50V. The MOSFET is housed in a TO-220AB package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This component is suitable for high-power applications in industries such as industrial power supplies, automotive systems, and renewable energy solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 50 V |
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