SUP65P04-15-E3
MOSFET P-CH 40V 65A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP65P04-15-E3 is a P-Channel Power MOSFET from the TrenchFET® series. This component features a 40V drain-to-source breakdown voltage and a continuous drain current capability of 65A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 15mOhm at 30A and 10V Vgs. It operates with a gate drive voltage range of 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 130 nC at 10V and an input capacitance (Ciss) of 5400 pF at 25V. The SUP65P04-15-E3 is housed in a TO-220AB package, suitable for through-hole mounting. It offers a maximum power dissipation of 120W (Tc) and 3.75W (Ta), with an operating temperature range from -55°C to 175°C. This component is utilized in applications such as power switching and motor control within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |