SUP60N10-18P-E3
MOSFET N-CH 100V 60A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP60N10-18P-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 100V drain-source voltage (Vdss) and a continuous drain current capability of 60A at case temperature. The Rds(On) is specified at a maximum of 18.3mOhm at 15A and 10V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it offers a maximum power dissipation of 150W at case temperature. Key parameters include a gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 2600 pF at 50V. This component is utilized in applications such as power supplies, motor control, and general-purpose switching. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 50 V |