SUP60N10-16L-E3
MOSFET N-CH 100V 60A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP60N10-16L-E3 is an N-Channel MOSFET from the TrenchFET® series. This component features a 100 V drain-to-source voltage (Vdss) and a continuous drain current capability of 60 A at 25°C (Tc). The device offers a low on-resistance of 16 mOhm maximum at 30 A and 10 V (Vgs). With a maximum power dissipation of 150 W (Tc), it is housed in a TO-220AB package, suitable for through-hole mounting. Key characteristics include a gate charge (Qg) of 110 nC maximum at 10 V (Vgs) and an input capacitance (Ciss) of 3820 pF maximum at 25 V (Vds). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in various industrial applications, including power supplies and motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3820 pF @ 25 V |