SUP60N06-12P-GE3
MOSFET N-CH 60V 60A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP60N06-12P-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The device exhibits a low on-resistance of 12mOhm maximum at 30A and 10V. With a gate charge (Qg) of 55 nC maximum at 10V and input capacitance (Ciss) of 1970 pF maximum at 30V, it is suitable for applications requiring efficient switching. The TO-220AB package allows for through-hole mounting and offers a maximum power dissipation of 3.25W (Ta) or 100W (Tc). This component is utilized in power supply designs, automotive applications, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.25W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 30 V |