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SUP60N06-12P-E3

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SUP60N06-12P-E3

MOSFET N-CH 60V 60A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUP60N06-12P-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 60V drain-to-source voltage (Vds) and a continuous drain current (Id) of 60A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 12mOhm at 30A drain current and 10V gate-source voltage. Its low on-resistance and high current handling capabilities make it suitable for applications requiring efficient power switching. The MOSFET is packaged in a TO-220AB through-hole package, facilitating straightforward board mounting. Key parameters include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 1970 pF at 30V. Power dissipation is rated at 100W (Tc) and 3.25W (Ta). This component is utilized in industries such as industrial power supplies, automotive electronics, and motor control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1970 pF @ 30 V

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