SUP60N06-12P-E3
MOSFET N-CH 60V 60A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUP60N06-12P-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 60V drain-to-source voltage (Vds) and a continuous drain current (Id) of 60A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 12mOhm at 30A drain current and 10V gate-source voltage. Its low on-resistance and high current handling capabilities make it suitable for applications requiring efficient power switching. The MOSFET is packaged in a TO-220AB through-hole package, facilitating straightforward board mounting. Key parameters include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 1970 pF at 30V. Power dissipation is rated at 100W (Tc) and 3.25W (Ta). This component is utilized in industries such as industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.25W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 30 V |