SUP60N02-4M5P-E3
MOSFET N-CH 20V 60A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP60N02-4M5P-E3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage, with a continuous drain current capability of 60A at 25°C (Tc). The low on-resistance of 4.5mOhm at 20A and 10V Vgs ensures high efficiency. The gate drive voltage range for optimal performance is specified from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 50nC at 4.5V and input capacitance (Ciss) of 5950pF at 10V. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. Power dissipation is rated at 3.75W (Ta) and 120W (Tc). The SUP60N02-4M5P-E3 is housed in a TO-220AB package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C. This component is utilized in power supply, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 10 V |