SUP60061EL-GE3
P-CHANNEL 80 V (D-S) MOSFET TO-2Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUP60061EL-GE3 is a P-channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 150A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The TrenchFET® technology ensures a low on-resistance of 5.8mOhm at 20A and 10V (Vgs). Key electrical specifications include a gate charge (Qg) of 218 nC at 10V and input capacitance (Ciss) of 9600 pF at 40V (Vds). The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is rated at 2.5V at 250µA. This MOSFET is housed in a TO-220AB package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). The SUP60061EL-GE3 is utilized in power management, automotive, and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 218 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 40 V |
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