SUP60030E-GE3
MOSFET N-CH 80V 120A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUP60030E-GE3 is an N-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) capability of 120A at 25°C, with a maximum power dissipation of 375W (Tc). The low on-resistance is specified at 3.4mOhm maximum at 30A and 10V gate drive. Key characteristics include a gate charge (Qg) of 141 nC at 10V and input capacitance (Ciss) of 7910 pF at 40V. This device is housed in a TO-220AB through-hole package, operating across a temperature range of -55°C to 175°C. This MOSFET is widely utilized in power supply, automotive, and industrial applications requiring high current handling and efficient switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7910 pF @ 40 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
