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SUP60030E-GE3

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SUP60030E-GE3

MOSFET N-CH 80V 120A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUP60030E-GE3 is an N-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) capability of 120A at 25°C, with a maximum power dissipation of 375W (Tc). The low on-resistance is specified at 3.4mOhm maximum at 30A and 10V gate drive. Key characteristics include a gate charge (Qg) of 141 nC at 10V and input capacitance (Ciss) of 7910 pF at 40V. This device is housed in a TO-220AB through-hole package, operating across a temperature range of -55°C to 175°C. This MOSFET is widely utilized in power supply, automotive, and industrial applications requiring high current handling and efficient switching.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 55 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7910 pF @ 40 V

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