SUP53P06-20-GE3
MOSFET P-CH 60V 9.2A/53A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP53P06-20-GE3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and offers a continuous drain current of 9.2A at ambient temperature (Ta) and 53A at case temperature (Tc). The low on-resistance is specified at 19.5mOhm maximum at 30A and 10V Vgs. With a maximum power dissipation of 3.1W (Ta) and 104.2W (Tc), it is suitable for power management in industrial, automotive, and renewable energy systems. The device utilizes a TO-220AB through-hole package for robust mounting. Key electrical characteristics include a gate charge (Qg) of 115 nC maximum at 10V Vgs and input capacitance (Ciss) of 3500 pF maximum at 25V Vds. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 104.2W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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