SUP50N10-21P-GE3
MOSFET N-CH 100V 50A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP50N10-21P-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). The TrenchFET® technology ensures a low on-resistance (Rds On) of 21mOhm maximum at 10A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 125W at 25°C (Tc), it is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 68 nC maximum at 10V and an input capacitance (Ciss) of 2055 pF maximum at 50V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220AB package for through-hole mounting. This MOSFET is commonly utilized in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2055 pF @ 50 V |
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