SUP50N03-5M1P-GE3
MOSFET N-CH 30V 50A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP50N03-5M1P-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). The Vishay Siliconix SUP50N03-5M1P-GE3 offers a low on-resistance (Rds On) of 5.1mOhm maximum at 22A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 66 nC maximum at 10V and input capacitance (Ciss) of 2780 pF maximum at 15V. Power dissipation is rated at 2.7W (Ta) and 59.5W (Tc). The device is housed in a TO-220AB package suitable for through-hole mounting. Applications include power management, industrial power supplies, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 59.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 15 V |
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