SUP50020EL-GE3
MOSFET N-CH 60V 120A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SUP50020EL-GE3 is an N-channel power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 375W (Tc). The low on-resistance, specified at a maximum of 2.3mOhm at 30A and 10V gate-source drive, ensures minimal conduction losses. Key parameters include a gate charge of 126 nC (max) at 10V and input capacitance (Ciss) of 11113 pF (max) at 30V. The device is housed in a standard TO-220AB package for through-hole mounting, supporting operating temperatures from -55°C to 175°C. This MOSFET is suitable for use in industrial automation, power supplies, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11113 pF @ 30 V |
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