SUP50020E-GE3
MOSFET N-CH 60V 120A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SUP50020E-GE3 is an N-Channel MOSFET from the TrenchFET® series. This component features a 60V drain-to-source voltage (Vdss) and supports continuous drain current (Id) up to 120A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). Its low on-resistance (Rds On) is rated at 2.4mOhm maximum at 30A and 10V Vgs. The device utilizes MOSFET technology and is housed in a TO-220AB through-hole package. The gate charge (Qg) is a maximum of 128 nC at 10V Vgs, and the maximum gate-source voltage (Vgs) is ±20V. This component is suitable for applications in power management, automotive, and industrial systems. It operates within an extended temperature range from -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
