SUP45P03-09-GE3
MOSFET P-CH 30V 45A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SUP45P03-09-GE3 is a P-Channel Power MOSFET designed for demanding applications. This through-hole component, housed in a TO-220AB package, features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) rating of 45A at 25°C (Tc). With a low on-resistance of 8.7mOhm at 20A and 10V, it offers efficient power handling. The device supports a gate-source drive voltage range from 4.5V to 10V, with a maximum Gate-Source voltage (Vgs) of ±20V. Key parameters include a maximum power dissipation of 73.5W (Tc), a gate charge (Qg) of 90 nC at 10V, and an input capacitance (Ciss) of 2700 pF at 15V. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power management, industrial motor control, and automotive systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 73.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 15 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
