SUP40P10-43-GE3
MOSFET P-CH 100V 36A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SUP40P10-43-GE3 is a P-Channel TrenchFET® Power MOSFET designed for high-efficiency power management applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 36A at 25°C (Tc). With a low on-resistance of 43mOhm at 10A and 10V, it minimizes conduction losses. The MOSFET is housed in a standard TO-220AB package, facilitating through-hole mounting. Its thermal performance is characterized by a maximum power dissipation of 125W at 25°C (Tc) and 2W at 25°C (Ta). Key parameters include a gate charge (Qg) of 160 nC (max) at 10V Vgs and an input capacitance (Ciss) of 4600 pF (max) at 50V Vds. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in industrial, automotive, and consumer electronics sectors requiring robust and efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 50 V |