SUP40N10-30-GE3
MOSFET N-CH 100V 38.5A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP40N10-30-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 38.5A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 30mOhm at 15A and 10V Vgs. Designed for through-hole mounting, it is supplied in a TO-220AB package. Key electrical characteristics include a maximum Gate Charge (Qg) of 60 nC at 10V Vgs and an input capacitance (Ciss) of 2400 pF at 25V Vds. The MOSFET supports a Vgs range of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation ratings are 3.1W (Ta) and 89W (Tc). This component is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |