SUP40N10-30-E3
MOSFET N-CH 100V 40A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP40N10-30-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component offers a 100V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C (Tc). It features a low on-resistance (Rds(on)) of 30mOhm maximum at 15A and 10V gate-source voltage. The device is housed in a TO-220AB through-hole package, suitable for applications requiring robust thermal management with a continuous power dissipation of 107W at 25°C (Tc). Key electrical characteristics include a gate charge (Qg) of 60 nC maximum at 10V and an input capacitance (Ciss) of 2400 pF maximum at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET finds application in power conversion, motor control, and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |