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SUP40010EL-GE3

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SUP40010EL-GE3

MOSFET N-CH 40V 120A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix ThunderFET® SUP40010EL-GE3 is a high-efficiency N-Channel Power MOSFET designed for demanding applications. This component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 120A (Tc) at 25°C. The SUP40010EL-GE3 offers a low on-resistance of 1.8mOhm (Max) at 30A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 375W (Tc), it is suitable for power conversion, motor control, and industrial automation systems. The device utilizes a TO-220AB package for ease of through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 230 nC (Max) and input capacitance (Ciss) of 11155 pF (Max) at 30V Vds.

Additional Information

Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11155 pF @ 30 V

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