SUP36N20-54P-E3
MOSFET N-CH 200V 36A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP36N20-54P-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C (Tc). The low on-resistance (Rds On) of 53mOhm maximum at 20A and 15V gate-source voltage ensures efficient power transfer. With a maximum gate charge (Qg) of 127 nC at 15V, it offers optimized switching characteristics. The Vishay Siliconix SUP36N20-54P-E3 boasts a power dissipation of 166W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). This device is housed in a standard TO-220AB package, making it suitable for through-hole mounting in applications such as power supplies, motor control, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.12W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |