SUP28N15-52-E3
MOSFET N-CH 150V 28A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP28N15-52-E3 is an N-Channel Power MOSFET from the TrenchFET® series, engineered for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 28A at 25°C (Tc). The device offers a maximum ON-resistance (Rds On) of 52mOhm at 5A and 10V gate-source voltage, with a typical gate charge (Qg) of 40 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1725 pF at 25V. With a power dissipation capacity of 120W (Tc), this MOSFET is housed in a standard TO-220AB package for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial and automotive power management systems requiring robust switching characteristics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |