SUP25P10-138-GE3
MOSFET N-CH 100V 16.3A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP25P10-138-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 16.3 A at 25°C (Tc). With a maximum Rds On of 13.8 mOhm at 6 A and 10 V, it offers low conduction losses. The device is packaged in a standard TO-220AB through-hole package, facilitating ease of assembly. Key parameters include a gate charge (Qg) of 60 nC at 10 V and input capacitance (Ciss) of 2100 pF at 50 V. Power dissipation is rated at 3.1 W (Ta) and 73.5 W (Tc). This MOSFET is suitable for applications in industrial power supplies, automotive systems, and high-efficiency power conversion.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 73.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
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