SUP18N15-95-E3
MOSFET N-CH 150V 18A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP18N15-95-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 18 A at 25°C (Tc). The Rds(on) is specified at a maximum of 95 mOhm when conducting 15 A with a 10 V gate-source voltage. Designed for through-hole mounting in a TO-220AB (TO-220-3) package, it offers a maximum power dissipation of 88 W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 900 pF at 25 V. This MOSFET is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |