SUP10250E-GE3
MOSFET N-CH 250V 63A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SUP10250E-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 63A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The SUP10250E-GE3 utilizes advanced MOSFET technology for efficient switching and low on-resistance. It is housed in a standard TO-220AB through-hole package, facilitating easy integration into power supply designs, motor control systems, and industrial power conversion equipment. Key electrical characteristics include a gate charge (Qg) of 88 nC typical at 10V Vgs, a gate-source threshold voltage (Vgs(th)) of 4V maximum at 250µA, and a maximum gate-source voltage of ±20V. The operating junction temperature range is from -55°C to 175°C.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
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