SUM90P10-19-E3
MOSFET P-CH 100V 90A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET, part number SUM90P10-19-E3, is a P-channel device featuring a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C (Tc). This surface mount component, housed in a TO-263 (D2PAK) package, offers a low on-resistance (Rds On) of 19mOhm at 20A and 10V (Vgs). With a maximum gate charge (Qg) of 330 nC at 10V and input capacitance (Ciss) of 12000 pF at 50V (Vds), it is suitable for demanding power applications. The device can dissipate up to 375W (Tc) and operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 13.6W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 50 V |