SUM90N08-7M6P-E3
MOSFET N-CH 75V 90A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM90N08-7M6P-E3 is an N-Channel Power MOSFET from the TrenchFET® series, designed for high-efficiency power conversion. This device features a 75V drain-to-source voltage (Vdss) and a continuous drain current capability of 90A at 25°C (Tc). The low on-resistance of 7.6mOhm at 30A and 10V (Vgs) significantly minimizes conduction losses. With a maximum gate charge of 90nC at 10V (Vgs) and input capacitance of 3528pF at 30V (Vds), it offers excellent switching performance. The device is housed in a TO-263-3, D2PAK surface mount package, enabling high power density. Maximum power dissipation is rated at 3.75W (Ta) and 150W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3528 pF @ 30 V |
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