SUM90N08-4M8P-E3
MOSFET N-CH 75V 90A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM90N08-4M8P-E3 is an N-Channel Power MOSFET designed for high-current applications. This component features a 75V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C (Tc). The low on-resistance is specified at 4.8mOhm at 20A and 10V (Vgs). Key characteristics include a gate charge (Qg) of 160 nC at 10V and an input capacitance (Ciss) of 6460 pF at 40V (Vds). The MOSFET is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management and board space optimization. It is commonly utilized in power supply units, automotive electronics, and industrial motor control systems. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460 pF @ 40 V |
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