SUM90N06-5M5P-E3
MOSFET N-CH 60V 90A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM90N06-5M5P-E3 is an N-Channel Power MOSFET engineered for high-efficiency power switching applications. This device features a 60 V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). Optimized for reduced on-resistance, the SUM90N06-5M5P-E3 exhibits a maximum Rds(on) of 5.5mOhm at 20A and 10V gate drive. Its TrenchFET® technology minimizes gate charge (Qg) to 120nC (max) at 10V, facilitating faster switching speeds. The device offers a high power dissipation of 272W (Tc) and operates across a wide temperature range of -55°C to 175°C. The TO-263 (D2PAK) surface mount package ensures robust thermal performance and ease of integration in automated manufacturing processes. This MOSFET is suitable for use in demanding power management solutions across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 272W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 30 V |
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