SUM90N06-4M4P-E3
MOSFET N-CH 60V 90A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SUM90N06-4M4P-E3, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). This surface mount device, in a TO-263 (D2PAK) package, features a low on-resistance of 4.4mOhm maximum at 20A and 10V Vgs. Key parameters include a gate charge of 160 nC maximum at 10V Vgs and input capacitance of 6190 pF maximum at 30V Vds. With a maximum power dissipation of 300W at 25°C (Tc), this MOSFET is engineered for demanding applications, including automotive, industrial power supplies, and motor control systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6190 pF @ 30 V |
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