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SUM90N04-3M3P-E3

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SUM90N04-3M3P-E3

MOSFET N-CH 40V 90A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUM90N04-3M3P-E3 is an N-Channel Power MOSFET from the TrenchFET® series, designed for high-efficiency power switching applications. This component features a 40V drain-to-source voltage rating and supports a continuous drain current of 90A at 25°C (Tc). The device exhibits a low on-resistance of 3.3mOhm maximum at 22A and 10V Vgs, optimized for reduced conduction losses. With a gate charge (Qg) of 131 nC maximum at 10V Vgs and input capacitance (Ciss) of 5286 pF maximum at 20V Vds, it ensures efficient switching performance. The MOSFET is housed in a surface-mount TO-263 (D2PAK) package, allowing for automated assembly and efficient thermal management with a maximum power dissipation of 125W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial power supplies, automotive systems, and high-power DC-DC converters.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs3.3mOhm @ 22A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5286 pF @ 20 V

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