SUM90330E-GE3
MOSFET N-CH 200V 35.1A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® MOSFET N-Channel SUM90330E-GE3. This TO-263 (D2PAK) packaged device features a 200V drain-source breakdown voltage and a continuous drain current rating of 35.1A at 25°C (Tc). With a maximum on-resistance of 37.5mOhm at 12.2A and 10V Vgs, the SUM90330E-GE3 offers efficient power handling up to 125W (Tc). Key parameters include a gate charge of 32nC (max) and input capacitance of 1172pF (max). Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for high-power switching applications in industries such as industrial power supplies and automotive systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 37.5mOhm @ 12.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 100 V |
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