SUM90220E-GE3
MOSFET N-CH 200V 64A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUM90220E-GE3 is an N-Channel ThunderFET® power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 64A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The low on-resistance (Rds On) of 21.6mOhm is achieved at 15A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 48 nC maximum at 10V and input capacitance (Ciss) of 1950 pF maximum at 100V. This device supports gate-source voltages up to ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. The TO-263 (D2PAK) package facilitates surface mounting and is supplied on tape and reel. This MOSFET is suitable for use in power supply, industrial, and automotive sectors.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 100 V |
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