SUM90142E-GE3
MOSFET N-CH 200V 90A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® MOSFET N-Channel SUM90142E-GE3 is a surface-mount power MOSFET designed for high-efficiency power conversion applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current capability of 90A (Tc) at 25°C, with a maximum power dissipation of 375W (Tc). The N-channel device offers a low on-resistance (Rds On) of 15mOhm at 30A and 10V Vgs, contributing to reduced conduction losses. It utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK package, suitable for high-density power designs. Key electrical parameters include a gate charge (Qg) of 87 nC (max) at 10V Vgs and input capacitance (Ciss) of 3120 pF (max) at 100V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 100 V |
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