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SUM90140E-GE3

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SUM90140E-GE3

MOSFET N-CH 200V 90A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUM90140E-GE3 is an N-Channel ThunderFET® MOSFET designed for demanding power applications. This component features a high drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 90A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 17mOhm maximum at 30A and 10V gate-source voltage. With a maximum power dissipation of 375W (Tc), it is suitable for high-power switching and power conversion circuits. The MOSFET is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 96 nC maximum at 10V and input capacitance (Ciss) of 4132 pF maximum at 100V. This component is utilized in industries such as industrial power supplies, automotive electronics, and renewable energy systems.

Additional Information

Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4132 pF @ 100 V

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