SUM90100E-GE3
N-CHANNEL 200-V (D-S) MOSFET D2PManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM90100E-GE3 is a 200 V N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion applications. This surface-mount device in a TO-263 (D2PAK) package offers a continuous drain current capability of 150 A at 25°C (Tc) with a maximum power dissipation of 375 W (Tc). The low on-resistance of 11.4 mO at 16 A and 10 V gate drive, combined with a gate charge of 110 nC at 10 V, facilitates efficient switching. Key parameters include a Vgs(th) of 4 V at 250 µA and a maximum Vgs of ±20 V. The input capacitance (Ciss) is rated at 3930 pF at 100 V. This component is suitable for use in demanding applications such as power supplies, motor control, and DC-DC converters within the industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3930 pF @ 100 V |
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