SUM85N03-06P-E3
MOSFET N-CH 30V 85A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET, part number SUM85N03-06P-E3, is an N-Channel device featuring a 30V drain-source voltage (Vdss). This surface-mount component, packaged in a TO-263 (D2PAK) case, offers a continuous drain current (Id) of 85A at 25°C (Tc). The Rds(On) is specified at a maximum of 6mOhm at 20A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 65 nC maximum at 10V and an input capacitance (Ciss) of 3100 pF maximum at 25V. Power dissipation is rated at 3.75W (Ta) and 100W (Tc). This device is suitable for applications in power management, automotive, and industrial systems requiring efficient switching performance. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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