SUM80090E-GE3
MOSFET N-CH 150V 128A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® SUM80090E-GE3 is an N-channel power MOSFET featuring a 150V drain-source voltage. This surface-mount device, housed in a TO-263 (D2PAK) package, offers a continuous drain current capability of 128A at 25°C with a maximum power dissipation of 375W (Tc). The low on-resistance of 9mOhm is achieved at 30A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 95 nC (max) at 10V and input capacitance (Ciss) of 3425 pF (max) at 75V. The device operates across a temperature range of -55°C to 175°C and supports gate-source voltages up to ±20V, with a threshold voltage (Vgs(th)) of 5V at 250µA. This component is suitable for applications in industrial power supplies, automotive systems, and electric vehicle charging.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3425 pF @ 75 V |
Request a Quote
Clients Also Buy
SIR622DP-T1-RE3
MOSFET N-CH 150V 12.6A PPAK
SIR690DP-T1-GE3
MOSFET N-CH 200V 34.4A PPAK SO-8
SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70
