SUM75N15-18P-E3
MOSFET N-CH 150V 75A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SUM75N15-18P-E3, offers a 150 V breakdown voltage with a continuous drain current capability of 75 A at 25°C (Tc). This device features a low on-resistance of 18 mOhm maximum at 20 A and 10 V gate drive. The SUM75N15-18P-E3 is housed in a TO-263 (D2PAK) surface-mount package, supporting a maximum power dissipation of 312.5 W at 25°C (Tc). Key electrical parameters include a gate charge of 100 nC (max) at 10 V and an input capacitance of 4180 pF (max) at 75 V. With an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supply design, automotive electronics, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.12W (Ta), 312.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 75 V |