SUM75N06-09L-E3
MOSFET N-CH 60V 90A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel device, part number SUM75N06-09L-E3, offers a 60V drain-source breakdown voltage and a continuous drain current rating of 90A at 25°C (Tc). This surface-mount component, packaged in a TO-263 (D2PAK) configuration, features a low on-resistance of 9.3mOhm at 30A and 10V Vgs. The device exhibits a typical gate charge of 75nC at 10V and an input capacitance (Ciss) of 2400pF at 25V. Its technology is based on Metal Oxide. This MOSFET is suitable for applications in industrial and automotive sectors requiring robust power switching capabilities. The component is supplied in Cut Tape packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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