SUM70N04-07L-E3
MOSFET N-CH 40V 70A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® series N-Channel Power MOSFET, part number SUM70N04-07L-E3, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 70A at 25°C (Tc). This device features a low on-resistance of 7.4mOhm maximum at 30A, 10V, enabled by its trench technology for reduced conduction losses. The MOSFET is housed in a TO-263 (D2PAK) surface-mount package, supporting efficient thermal management with a maximum power dissipation of 100W (Tc). Key electrical parameters include a gate charge (Qg) of 75 nC maximum at 10V and input capacitance (Ciss) of 2800 pF maximum at 25V. It operates across an extended temperature range of -55°C to 175°C (TJ). This component is suitable for high-current switching applications found in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |