SUM70101EL-GE3
MOSFET P-CH 100V 120A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM70101EL-GE3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The device exhibits a low on-resistance (Rds On) of 10.1mOhm at 30A and 10V, facilitated by its advanced trench technology.
The SUM70101EL-GE3 is housed in a TO-263-3, D2PAK surface-mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 190 nC at 10V and input capacitance (Ciss) of 7000 pF at 50V. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages (Vgs) up to ±20V. This MOSFET is commonly utilized in automotive, industrial, and power supply systems requiring robust power handling capabilities.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 50 V |
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