SUM70060E-GE3
MOSFET N-CH 100V 131A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix ThunderFET® SUM70060E-GE3 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 131A at 25°C, with a maximum power dissipation of 375W at the same temperature. Its low on-resistance (Rds On) of 5.6mOhm at 30A and 10V gate-source voltage (Vgs) ensures efficient power transfer.
The SUM70060E-GE3 is housed in a TO-263 (D2PAK) surface-mount package, facilitating integration into compact designs. Key electrical characteristics include a maximum gate charge (Qg) of 81 nC at 10V and an input capacitance (Ciss) of 3330 pF at 50V. This device operates across a temperature range of -55°C to 175°C. Its robust design makes it suitable for use in automotive, industrial power supplies, and power conditioning systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 131A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3330 pF @ 50 V |
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