SUM70040M-GE3
MOSFET N-CH 100V 120A TO263-7Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUM70040M-GE3 is a TrenchFET® series N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 120 A at 25°C (Tc). With a low on-resistance of 3.8 mOhm at 20 A and 10 V (Vgs), it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 375 W at 25°C (Tc) and a high operating temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 120 nC at 10 V (Vgs) and input capacitance (Ciss) of 5100 pF at 50 V (Vds). The Vishay Siliconix SUM70040M-GE3 is supplied in a TO-263-7 (D2PAK) surface mount package, suitable for applications in automotive, industrial power, and renewable energy systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 50 V |
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